Paper Titles
Preface
Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures
p.1
Mechanism of Material Removal and the Generation of Defects by MD Analysis in Three-Dimensional Simulation in Abrasive Processes
p.6
Study of the Wettability between Diamond Abrasive and Vitrified Bond with Low Melting Point and High Strength
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Effect of Si and Ti Coating on Interface Bonding between Diamond and Fe-Based Metal Bond
p.15
Nanodiamond Modified with SHP
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Study on Tribological Performance of Fine-Grained Diamond Films
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The Experimental Study on Wear Performance of Brazed Diamond Grits
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Grinding Titanium Alloy with Brazed Monolayer CBN Wheels
p.33

Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures

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Abstract:

Formation, propagation and length of crack and hardness of single silicon wafer were investigated at different temperatures by means of Vickers indentation, using lower temperature testing unit with semiconductor refrigerating chip and higher temperature testing unit with closed electric furnace. The results show that the hardness of single silicon wafer decreases with the increase of temperature, while the length of crack increases with the increase of temperature. Ductile-brittle transition of the single silicon wafer can occur at different temperatures with the increase of load. When the load is smaller and temperature is lower, no cracks can be found.

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Periodical:

Key Engineering Materials (Volumes 359-360)

Pages:

1-5

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.359-360.1

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Online since:

November 2007

Authors:

Yu Li Sun, Dun Wen Zuo, Yong Wei Zhu, Duo Sheng Li, Mei Qi, Min Wang

Keywords:

Brittle-Ductile Transition, Hardness, Length of Crack, Single Silicon Wafer, Temperature

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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