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Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films

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Abstract:

Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

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Periodical:

Key Engineering Materials (Volumes 368-372)

Pages:

82-84

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.368-372.82

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Online since:

February 2008

Authors:

Y.H. Sun, Min Chen, W.K. An, A.H. Cai, J. Liu, K.L. Su

Keywords:

Dielectric, Ferroelectric, Film

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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