Paper Titles

EPR and IR Absorption of Defects in Isotopically Enriched Germanium
p.167

NMR Study of Impurity Electronic Structure and Dynamics
p.173

Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide
p.179

The Role of Point Defects in Non-Stoichiometric III-V Compounds
p.189

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
p.195

Bound Exciton Spectra in Semi-Insulating GaAs
p.201

Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors
p.207

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
p.213

Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
p.219

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Intrinsic Acceptors in Semi-Insulating...

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

195-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.195

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Online since:

November 1995

Authors:

K. Krambrock, C. Le Berre, C. Corbel, Kimmo Saarinen, Pekka J. Hautojärvi

Keywords:

GaAs, Intrinsic Defect, ODMR, Positron Annihilation

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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