Paper Titles

Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
p.255

Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs
p.261

Studies of Deep Levels in n-GaAs by SADLTS
p.267

Trends in the Metastability of DX-Centers
p.273

Carrier Concentrations Saturation in n Type Al_xGa_1-xAs
p.279

Doping Puzzles in II-VI and III-V Semiconductors
p.285

Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -
p.293

Acceptor Compensation in Nitrogen Doped Zinc Selenide
p.297

Nitrogen-Doping Efficiency in ZnSe and ZnTe
p.303

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Carrier Concentrations Saturation in n Type...

Carrier Concentrations Saturation in n Type Al_xGa_1-xAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

279-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.279

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Online since:

November 1995

Authors:

A.Y. Du, Ming Fu Li, T.C. Chong, S.J. Chua

Keywords:

AlGaAs, Carrier Concentration Saturation, DX Centers

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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