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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Dopant Diffusion in Strained and Relaxed Si1-xGex

Dopant Diffusion in Strained and Relaxed Si_1-xGe_x

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

345-348

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.345

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Online since:

November 1995

Authors:

A.D.N. Paine, Masami Morooka, Arthur F.W. Willoughby, Janet M. Bonar, P. Phillips, M.G. Dowsett, G. Cooke

Keywords:

Antimony, Boron, Diffusion, Si_1-xGe_x, Silicon-Germanium (SiGe)

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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