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Photoluminescence of Bulk Si-Ge Single Crystals
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Dopant Diffusion in Strained and Relaxed Si_1-xGe_x
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In Situ Phosphorus Doping of Si and Si_1-xGe_x Epitaxial Layers by RTP/VLP-CVD
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Electrical Transport in Si_xGe_1-x Bulk Alloys
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Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si_1-x Ge_x Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201In Situ Phosphorus Doping of Si and Si1-xGex...

In Situ Phosphorus Doping of Si and Si_1-xGe_x Epitaxial Layers by RTP/VLP-CVD

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

349-352

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.349

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Online since:

November 1995

Authors:

Xiao Dong Huang, Ping Han, Yi Shi, You Dou Zheng, Li Qun Hu, Rong Hua Wang, Shun Ming Zhu

Keywords:

In Situ Phosphorus Doping, Low-Temperature Epitaxy, Si_1-xGe_x, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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