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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Ion Beam Induced Epitaxial Crystallization of...

Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

73-78

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.73

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Online since:

May 1997

Authors:

J.K.N. Lindner, K. Volz, B. Stritzker

Keywords:

Amorphisation, Buried Layers, Epitaxy, IBIEC, IBIIA, Ion Beam Induced Crystallization, Ion Implantation, Silicon, Silicon Carbide (SiC), TEM

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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