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Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
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Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
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Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
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Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation
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Plasma Oxidation of SiC at Low Temperatures (below 300°C)
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Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
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Oxidation of Porous 4H-SiC Substrates
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Advances in SiC Materials and Technology for Schottky Diode Applications
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Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV Range
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Plasma Oxidation of SiC at Low Temperatures (below 300°C)

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1105-1108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1105

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Online since:

April 2002

Authors:

Masataka Satoh, Hisanori Shimada, Tomonori Nakamura, Naoshi Nagamoto, Sachiko Yanagihara

Keywords:

O2 Plasma, Oxidation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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