Paper Titles
Dynamics of 4H-SiC Plasticity
p.297
Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
p.301
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy
p.305
Photoluminescence Up-Conversion Processes in SiC
p.309
New Photoluminescence Features in 4H-SiC Induced by Hydrogenation
p.313
Analysis of Extended Defects in 6H-SiC Using Photoluminescence and Light Beam Induced Current Spectroscopy
p.317
Donor-Acceptor Pair Luminescence in 4H-SiC Doped with Nitrogen and Aluminum
p.321
Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC
p.325
Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
p.329

New Photoluminescence Features in 4H-SiC Induced by Hydrogenation

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

313-316

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.313

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Online since:

September 2003

Authors:

Yaroslav Koshka, Michael S. Mazzola, Jeffery L. Wyatt

Keywords:

Acceptor, Aluminum (Al), Boron, Hydrogen, Passivation, Photoluminescence (PL)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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