Paper Titles
Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
p.379
On the Unusual Nature of a DLTS-Detected Defect in Bulk n-Type 6H-SiC
p.383
High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers
p.387
Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes
p.391
Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization
p.395
Transport Investigation of Low-Nitrogen-Doped 6H-SiC Ion-Implantation vs. In Situ Doping
p.399
From Transport Measurements to Infrared Reflectance Spectra of n-Type Doped 4H-SiC Layer Stacks
p.403
Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H-SiC: Experiment and Simulation
p.407
Parameters of Electron-Hole Scattering in Silicon Carbide
p.411

Improved p-Type Conductivity in Heavily Al-Doped SiC by Ion-Beam-Induced Nano-Crystallization

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

395-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.395

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Online since:

September 2003

Authors:

V. Heera, K.N. Madhusoodanan, A. Mücklich, D. Panknin, Wolfgang Skorupa

Keywords:

Al Implantation, Ion-Beam-Induced Crystallization, Nanocrystalline SiC, p-Type Doping

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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