Paper Titles
Improved Understanding and Optimization of SiC Nearly Solar Blind UV Photodiodes
p.965
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
p.969
Effect of Tantalum in Sublimation Growth of Aluminum Nitride
p.975
Growth of AlN Bulk Crystals by Sublimation Sandwich Method
p.979
Seeded PVT Growth of Aluminum Nitride on Silicon Carbide
p.983
Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering
p.987
Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
p.991
Properties of AlN Layers Grown by Sublimation Epitaxy
p.995
Microstructure of GaN Layers Grown onto (001) and (111) GaAs Substrates by Molecular Beam Epitaxy
p.999

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials - 2002 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

983-986

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.983

Citation:

Cite this paper

Online since:

September 2003

Authors:

Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Keywords:

AlN Seeded Growth, Aluminum Nitride (AlN), A-Plane Growth, SiC Seeds for AlN, SiC Substrate Orientation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2003 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] L. J Schowalter, J.C. Rojo, G.A. Slack, Y. Shusterman, R. Wang, I. Bhat, G. Arzunmozhi, J. Cryst. Growth 211 (2000), p.78.

Google Scholar

[2] G.A. Slack, T.F. McNelly, J. Cryst. Growth 34 (1976), p.263.

Google Scholar

[3] C.M. Balkas, Z. Sitar, T. Zheleva, L. Bergmann, R. Nemanich, R.F. Davis, J. Cryst. Growth 179 (1997), p.363.

Google Scholar

[4] L. Liu, B. Liu, Y. Shi and J.H. Edgar, MRS Internet J. Nitride Semicond. Res. 6, 7 (2001).

Google Scholar

[5] R. Schlesser, Z. Sitar, J. Cryst. Growth 234 (2002), p.349.

Google Scholar

[6] R. Schlesser, R. Dalmau, Z. Sitar, J. Cryst. Growth 241 (2002), p.416.

Google Scholar

[7] B. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker, Mater. Sci. Forum 389-393 (2002), p.1445.

Google Scholar

[8] W.L. Sarney, L. Salamanca-Riba, T. Hossain, P. Zhou, H.N. Jayatirtha, H.H. Kang, R.D. Vispute, M. Spencer, K. Jones, MRS Internet J. Nitride Semicond. Res. 5S1, W5. 5 (2000).

DOI: 10.1557/s1092578300004543

Google Scholar

[9] G.A. Slack, Mat. Res. Soc. Symp. Proc. 512 (1998), p.35.

Google Scholar

[10] P.M. Dryburgh, J. of Crystal Growth 125 (1992), p.65.

Google Scholar

[11] S.K. Lilov, Mater. Sci. Eng. B 21 (1993), p.65.

Google Scholar

[12] J.A. Lely, Ber. Dt. Keram. Ges. 8 (1955), p.229 Fig. 3. SEM pictures of cleaved surfaces through the SiC substrate and PVT grown AlN layer. A corresponds to A and B in Fig. 2, B corresponds to D in Fig. 2.

Google Scholar