Paper Titles
Microstructure and Electrical Properties of SrBi2Ta2O9 Ceramics Processed by Templated Grain Growth
p.35
Structural and Dielectric Properties of Mg-Doped Strontium Titanate Ceramics: Dependence on the Materials Processing
p.40
La(Mg1/2Ti1/2)O3 – Based Materials for Microwave Applications
p.45
Lead Zirconate Titanate Thin Films Prepared with Different Types of Seeds: A Comparison Study
p.50
The Use of Thin Silicon Films in Flat Panel Displays
p.56
Improvement of Field-Effect Mobilities in TFTs: Surface Plasma Treatments Vs Stack Dielectric Structures
p.64
Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications
p.69
MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
p.73
Characterization of Polymorphous Silicon Thin Film and Solar Cells
p.77

The Use of Thin Silicon Films in Flat Panel Displays

Article Preview

Abstract:

You might also be interested in these eBooks
Advanced Materials Forum II View Preview

Info:

Periodical:

Materials Science Forum (Volumes 455-456)

Pages:

56-63

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.455-456.56

Citation:

Cite this paper

Online since:

May 2004

Authors:

Didier Pribat

Keywords:

Active Matrix Liquid Crystal Displays AMLCDs, Amorphous Si, Laser Crystallisation, Organic Light Emitting Materials, Organic Light-Emitting Devices (OLEDs), Polycrystalline Si, Thin Film Transistor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] O. Heil: British Patent 439 457, December (1935).

Google Scholar

[2] K. Weimer: Proc. IRE Vol. 50 (1962), p.1462.

Google Scholar

[3] P. Brody and H.E. Kunig: Appl. Phys. Lett. Vol. 9 (1966), p.259.

Google Scholar

[4] P. Brody and D.J. Page: Government Microcircuit Applications Conf. Digest, (1969), p.92.

Google Scholar

[5] J. Lechner, F.J. Marlowe, E.O. Nester, and J. Tults: Proc. IEEE Vol. 59, (1971). P. 1566.

DOI: 10.1109/proc.1971.8489

Google Scholar

[6] The principle of twisted nematic (TN) liquid crystal displays was first described in: M. Schad and W. Helfrich, Appl. Phys. Lett., Vol. 18, (1971).

Google Scholar

[7] S. Soh: SID 2002 Seminar Lecture Notes, Seminar M4: AMLCD Manufacturing Technology.

Google Scholar

[8] S. Kim: Information Displays Vol. 17, No 8 (2002), p.22.

Google Scholar

[9] H. Souk and N.D. Kim: SID '02 Digest, (2002), p.1277.

Google Scholar

[10] W. Kim, Y.B. Park, H.S. Kong, D.G. Kim, S.J. Kang, J.W. Jang, and S.S. Kim: SID '00 Digest (2000), p.1006.

Google Scholar

[11] H. Lee, B.S. Cho, B.J. Kang, H.J. Yang, J.G. Lee, I.K. Woo, S.W. Lee, J. Jang, G.S. Chae, and H.S. Soe: Appl. Phys. Lett. Vol. 79, (2001), p.3962.

Google Scholar

[12] H. Kim and J.H. Souk: Proc. 19th Internat. Display Research Conference, (1999), p.115.

Google Scholar

[13] Kumagawa, A. Takimoto, and H. Wakemoto: SID '02 Digest (2002), p.1288.

Google Scholar

[14] Furuhashi, K. Kawabe, J-I Hirakata, Y. Tanaka, T. Sato: SID '02 Digest (2002), p.1284.

Google Scholar

[15] .H. Lowndes, S.J. Pennycook, G.E. Jellison, S.P. Withrow, and D.N. Mashburn: J. Mater. Res., Vol. 2 (1987), p.648.

Google Scholar

[16] .R. Stiffler, M.O. Thomson, and P.S. Percy: Phys. Rev. Lett., Vol. 60 (1988), p.2519.

Google Scholar

[17] .S. Im and H.J. Kim: Appl. Phys. Lett., Vol. 64 (1994), p.2303.

Google Scholar

[18] Pribat, P. Legagneux, F. Plais, C. Reita, F. Petinot, and O. Huet: Mat. Res. Soc. Symp. Proc. Vol. 424 (1997), p.127.

DOI: 10.1557/proc-424-127

Google Scholar

[19] Legagneux, F. Petinot, O. Huet, F. Plais, C. Reita, D. Pribat, R. Carluccio, A. Peccora, L. Mariucci, and G. Fortunato: Proc. of the 1996 ESSDERC, Eds. G. Baccarani and M. Rudan, Editions Frontières (1996), p.1071.

DOI: 10.1557/proc-424-127

Google Scholar

[20] Pribat, P. Legagneux, C. Collet, F. Plais, O. Huet, and, C. Reita,: Proc. AMLCD’98 (1998) p.9.

Google Scholar

[21] Legagneux, C. Collet, and D. Pribat: French Patent Application No 98 08556, deposited on July 3 rd, (1998).

Google Scholar

[22] S. Brotherton: presented at the SID Mid-Europe Chapter Conference, Rome, March (2001).

Google Scholar

[23] J.S. Im and R. S. Sposili: MRS Bulletin, Vol. 21, No 3 (1996), p.39.

Google Scholar

[24] Dassow, J.R. Kohler, M. Nerding, HP. Strunk, Y. Helen, K. Mourgues, O. Bonnaud, T. Mohammed-Brahim, and JH. Werner: Mat. Res. Soc. Symp. Proc. Vol 21, (2000), Q9. 3. 1.

DOI: 10.1557/proc-621-q9.3.1

Google Scholar

[25] Matsumura: Proceedings of IDW’02 (2002), p.263.

Google Scholar

[26] Takeuchi, A. Hara, and N. Sasaki: Proceedings of IDMC ’02 (2002), p.73.

Google Scholar

[27] M. Ha: SID’00 Digest (2000), p.1116.

Google Scholar

[28] K. Kim, K.J. Kim, K.C. Ahn, H.S. Choi, and Y.M. Ha: Proc. of IDMC ’02 (2002), p.69.

Google Scholar

[29] W. Tang and S.A. van Slyke: Appl. Phys. Lett. Vol. 51 (1987), 913.

Google Scholar

[30] H. Burroughes, D.D.C. Bradley, A.R. Brown, R.N. Marks, K. Mackey, R.H. Friend, P.L. Burn, and A.B. Holmes: Nature, Vol. 347, (1990), p.539.

Google Scholar

[31] D. Pribat and F. Plais: Solid State Phenomena Vol. 80-81 (2001), p.385.

Google Scholar

[32] J.H. Kim, D. Lee, and J. Kanicki: Eurodisplay 2002, (2002), p.601.

Google Scholar

[33] M.J. Powell, C.V. Berkel, and J.R. Hughes: Appl. Phys. Lett. Vol. 54 (1989), p.323.

Google Scholar

[34] T. van de Biggelaar, I. Camps, M. Childs, M. Fleuster, A. Giraldo, S. Godfrey, I.M. Hunter, M.T. Johnson, H. Lifka, R. Los, A. Sempel, J. M. Shannon, M.J. Trainor, R. W. Wilks, and N. Young: Proceedings of SPIE, Vol. 4295 (2001), p.134.

DOI: 10.1117/12.424868

Google Scholar