Paper Titles
Analysis of Threading Dislocations in Wide-Bandgap Hexagonal Semiconductors by Energetic Approach
p.383
Electron Back Scattering Diffraction (EBSD) as a Tool for the Investigation of 3C-SiC Nucleation and Growth on 6H or 4H
p.387
Reconstruction of Cleaved 6H-SiC Surfaces
p.391
The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC
p.395
H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization
p.399
Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum
p.403
SiC Surface Nanostructures Induced by Self-Ordering of Nano-Facets
p.407
Dynamic of Laser Ablation in SiC
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Tailoring the SiC Subsurface Stacking by the Chemical Potential
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H-Induced Si-Rich 3C-Si(100) 3x2 Surface Metallization

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Periodical:

Materials Science Forum (Volumes 457-460)

Pages:

399-402

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.457-460.399

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Online since:

June 2004

Authors:

M. D'Angelo, H. Enriquez, M. Silly, V. Derycke, V.Yu. Aristov, P. Soukiassian, C. Ottaviani, M. Pedio, P. Perfetti

Keywords:

Core Level and Valence Band Photoemission, Hydrogen, Metallization, Scanning Tunneling Microscopy, Scanning Tunneling Spectroscopy, Surface, Synchrotron Radiation (XRD)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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