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ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
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SiC/SiO2 Interface States: Properties and Models
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The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects
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Interface States in SiO2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
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Structural and Electronic Properties of Si1-xCxO2
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The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO2 Defects

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Abstract:

The density of interface traps (Dit) in thermally oxidized SiC is unacceptably high for MOS device fabrication. The most severe problem is posed by the extremely high concentration of slow acceptor states near the conduction band edge of 4H-SiC. These states are attributed to near interface traps originating from (probably intrinsic) defects in the oxide. Here a systematic theoretical search is presented for possible defects in the oxide with an appropriate acceptor level. Supercell calculations using a hybrid functional approach (and resulting in a correct gap) on defects in alpha-quartz exclude the oxygen vacancy and the oxygen interstitial, as possible candidates. In contrast, these calculations predict interstitial silicon to have an acceptor level in the appropriate range. The carbon interstitial in silica has an acceptor level somewhat deeper than that. Occupation of these levels give rise to significant rearrangement of the environment, leading to a more extended defect structure.

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

569-572

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.569

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Online since:

May 2005

Authors:

J.M. Knaup, Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Wolfgang J. Choyke

Keywords:

Near Interface Traps, Oxide, SiO2 Intrinsic Defects

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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