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Structural and Electronic Properties of Si1-xCxO2
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Surface and Interface Studies of Si-Rich 4H-SiC and SiO2
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Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
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Structural and Electronic Properties of Si1-xCxO2

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Abstract:

There is growing interest in understanding the properties of SiC-SiO2 interfaces, which can be formed by oxidation of silicon carbide surfaces. Here, we used variable cell shape ab initio molecular dynamics to investigate the structural and electronic properties of crystalline phases of silicon oxycarbide which could appear within such interfaces. We find that carbonoxygen single bonds may remain stable inside a silicon oxide matrix. For the Si2CO6 compound, there are at least two crystalline phases, both having large bulk modulii and wide bandgaps.

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Silicon Carbide and Related Materials 2004 View Preview

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

577-580

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.577

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Online since:

May 2005

Authors:

João F. Justo, Cesar R.S. da Silva, I. Pereyra, Lucy V.C. Assali

Keywords:

Ab Initio Methods, Interface, Oxidation

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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