Paper Titles
Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
p.613
Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
p.617
Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
p.621
Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature
p.625
J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C
p.629
P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth
p.633
Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
p.637
Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si+-/N+-Co-Implanted 4H-SiC
p.641
Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
p.645

J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C

Article Preview

Abstract:

Al+ implanted p+/n 4H-SiC diodes were realized via planar technology. The p+/n junctions were obtained by hot implantation at 400°C, followed by a post implantation annealing at 1600°C in Silane ambient. 136 diodes and other test structures were measured: the current voltage^curves and the resistivity of the implanted layer were investigated at room temperature. The majority of the measured diodes had a turn on voltage of about 1.75 V, a forward characteristic with exponential trend and ideality factor equal to 1.2, and a very low spread in the distribution of the reverse leakage current values at –100V. The average reverse leakage current value is (9.7 ± 0.4) × 10-9 A/cm2. The breakdown voltage of these diodes approached the theoretical value for the use epitaxial 4H-SiC layer, i.e. 0.75 – 1.0 kV. All these positive results are penalized by the high resistivity value of the implanted Al+ layer, which amounts to 11 W·cm that is one order of magnitude higher than the desired value.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2004 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

629-632

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.629

Citation:

Cite this paper

Online since:

May 2005

Authors:

Fabio Bergamini, Shailaja P. Rao, Stephen E. Saddow, Roberta Nipoti

Keywords:

Annealing, Ion Implantation, p+/n Junction Diode, Silane, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] Mulpuri V. Rao: Solid-State Electronics Vol. 47 (2003), p.213.

Google Scholar

[2] V. Heera, D. Panknin and W. Skorupa: Applied Surface Science Vol. 184 (2001), p.307.

Google Scholar

[3] Y. Zhang, W.J. Weber, W. Jiang, C.M. Wang, A. Hallen and G. Possnert: J. Appl. Physics Vol. 93 (2003), p. (1954).

Google Scholar

[4] S. Seshadri, G.W. Eldridge and A.K. Agarwal: Appl. Phys. Lett. Vol. 72 (1998), p. (2026).

Google Scholar

[5] M. Capano, S. Ryu, M.R. Melloch, J.A. Cooper, K. Rottner, S. Karlsson, N. Nordell, A. Powell and D.E. Walker: J. of Electron. Mater. Vol. 28 (1999), p.214.

DOI: 10.1007/s11664-999-0016-z

Google Scholar

[6] S. Rao, S.E. Saddow, F. Bergamini, R. Nipoti, Y. Emirov and A. Agarwal: MRS Spring (2004).

Google Scholar

[7] J.M. Bluet, J. Pernot, J. Camassel, S. Conteras, J.L. Robert, J.F. Michaud and T. Billon: J. Appl. Physics Vol. 88 (2000), p. (1971).

Google Scholar

[8] M. Capano, S. Ryu, M.R. Melloch, J.A. Cooper and M.R. Buss: J. Electron. Mater. Vol. 27 (1998), p.370.

Google Scholar

[9] T. Ohyanagi, T. Ohno, K. Amemiya and A. Watanabe: Material Science Forum Vol. 433-436 (2003), p.835.

Google Scholar

[10] N. Keskar, K. Shenai and P. Neudeck: Material Science Forum Vol. 338-342 (2000), p.1351.

Google Scholar

[11] T. Kimono, O. Takemura, H. Matsunami, T. Nakata and M. Inoue: J. Electron. Mater. Vol. 27 (1998), p.358.

Google Scholar