Paper Titles

TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System
p.571

Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si_1-xGe_x-Heterostructures
p.577

Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices
p.583

Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si
p.589

Characterization of MBE Grown Si/Si_1-xGe_x/Si Structures Using n⁺p-Diodes
p.595

Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements
p.601

Investigation of Recombination Properties of Ti Double Donor in Si
p.609

Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems
p.615

The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations
p.619

HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33Characterization of MBE Grown Si/Si1-xGex/Si...

Characterization of MBE Grown Si/Si_1-xGe_x/Si Structures Using n⁺p-Diodes

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology V

Info:

Periodical:

Solid State Phenomena (Volumes 32-33)

Pages:

595-600

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33.595

Citation:

Cite this paper

Online since:

December 1993

Authors:

K. Schmalz, H. Rücker, Hermann G. Grimmeiss, B. Dietrich, H. Frankenfeld, W. Mehr, H.J. Osten, P. Schley

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: