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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48DRAM Wafer Qualification Issues: Oxide Integrity...

DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing

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Gettering and Defect Engineering in Semiconductor Technology VI

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Periodical:

Solid State Phenomena (Volumes 47-48)

Pages:

327-352

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48.327

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Online since:

July 1995

Authors:

J.G. Park, George A. Rozgonyi

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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