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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64The Sloc Positron Beam Technique – A Unique Tool...

The Sloc Positron Beam Technique – A Unique Tool for the Study of Vacancy-Type Defects in Semiconductors

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Beam Injection Assessment of Defects in Semiconductors

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Periodical:

Solid State Phenomena (Volumes 63-64)

Pages:

291-300

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64.291

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Online since:

December 1998

Authors:

Reinhard Krause-Rehberg, S. Eichler, J. Gebauer, F. Börner

Keywords:

Defect Characterization, Ion Implantation, LT-GaAs, Positron Annihilation, VEPAS

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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