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Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices
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Evaluation of Recombination Velocity at Grain Boundaries in Poly-Si Solar Cells with Laser Beam Induced Current
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Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

345-350

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.345

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Online since:

June 2003

Authors:

Toshio Kamiya, Yoshikazu Furuta, Yong-Tsong Tan, Zahid A.K. Durrani, Hiroshi Mizuta, Haroon Ahmed

Keywords:

Grain Boundary, Oxide Tunneling Barrier, Polycrystalline Silicon Nanowire, Selective Oxidation, Single-Electron Charging Effects

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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