Paper Titles
Numerical Studies of Polycrystalline Silicon Film Growth
p.405
Mechanisms Controlling Preferred Orientation of Chemical Vapour Deposited Polycrystalline Films
p.411
Single-Electron Charging Phenomena in Nano/Polycrystalline Silicon Point Contact Transistors
p.419
Towards Complementary Metal-Oxide-Silicon Thin-Film Devices with a New Structure
p.429
Electrical Properties of High Value Doped Polysilicon-Based Resistors
p.435
Fabrication and Characterization of Ultra-Small Polycrystalline Silicon Islands for Advanced Multi-Level Silicon-On-Insulator Applications
p.441
Simple Fabrication of Mg2Si Thermoelectric Generator
p.447
Silicon Films Deposited by Low-Pressure Chemical Vapour Deposition for Microsystems
p.453
Sensitivity Improvement of Polysilicon Thin-Film Transistor-Based Magnetic Sensors
p.459

Simple Fabrication of Mg2Si Thermoelectric Generator

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Periodical:

Solid State Phenomena (Volume 93)

Pages:

447-452

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.93.447

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Online since:

June 2003

Authors:

T. Hosono, Y. Matsuzawa, M. Kuramoto, Y. Momose, H. Tatsuoka, H. Kuwabara

Keywords:

Interdiffusion, Isothermal Growth, Silicide, TEM, Thermoelectric Device

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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