Paper Titles
Radiation Hardening of Silicon for Detectors by Preliminary Irradiation
p.399
Computer Modelling of SiO2 Precipitation in Cz-Si Doped with Nitrogen
p.405
First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
p.415
Dislocation-Impurity Interaction in Silicon
p.423
Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
p.433
Dislocation Generation in Device Fabrication Process
p.439
Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon
p.447
Electrical and Optical Properties of Dislocations Generated under Pure Conditions
p.453
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
p.459

Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks
Gettering and Defect Engineering in Semiconductor Technology X View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

433-438

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.433

Citation:

Cite this paper

Online since:

September 2003

Authors:

M. Badylevich, Yu.L. Iunin, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan

Keywords:

Dislocation Mobility, Magnetic Field, Oxygen, Silicon, Spin-Dependent Reactions

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] V. Kveder, M. Kittler, and W. Schroeter: Phys. Rev. B Vol. 63 (2001), p.115208.

Google Scholar

[2] A. Umerski and R. Jones: Phil. Mag. A Vol. 67 (1993), p.905.

Google Scholar

[3] M. I. Heggie, S. Jenkins, C. P. Ewels, et al.: J. Phys.: Condens. Matter. Vol. 12 (2000), p.10263.

Google Scholar

[4] A. L. Buchachenko, R. Z. Sagdeev, K. M. Salikhov: Magnitnye i spinovye effekty v khimicheskikh reaktsijakh (Nauka, Novosibirsk 1978) (in Russian).

Google Scholar

[5] V. I. Al`shits, E. V. Darinskaja, T. M. Perekalina, A. A. Urusovskaja: Fiz. Tverd. Tela, Vol. 29 (1987), p.467 (in Russian).

Google Scholar

[6] Yu. I. Golovin, R. B. Morgunov, A. A. Baskakov, et al: JETP Lett. Vol. 69 (1999), p.114.

Google Scholar

[7] Yu. A. Ossipyan, Yu. I. Golovin, D. V. Lopatin et al: JETP Lett. Vol. 69 (1999), p.110.

Google Scholar

[8] V. Kveder, Yu. A. Ossipyan, A. I. Shalynin: JETP Vol. 83 (1982), p.699.

Google Scholar

[9] N. Levin, B. A. Zon: JETP Vol. 111 (1997), p.1373.

Google Scholar

[10] A. A. Skvortsov, A. M. Orlov, L. I. Gonchar: JETP Vol. 120 (2001), p.134.

Google Scholar

[11] V. N. Erofeev, V. I. Nikitenko: JETP Vol. 60 (1971), p.1780.

Google Scholar

[12] S. Senkader, A. Giannattasio, R. Flaster, and P. R. Wilshaw: J. Phys: Condens. Matter Vol. 14 (2002), p.13141.

Google Scholar

[13] B. V. Petukhov: Fiz. Tverd. Tela Vol. 24 (1982), p.439.

Google Scholar

[14] K. Sumino: Phys. Stat. Sol. A: Vol. 171 (1999), p.111.

Google Scholar

[15] S. Senkader, P. R. Wilshaw and R. J. Falster: J. Appl. Phys. Vol. 89 (2001), p.4803.

Google Scholar