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The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry
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Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides
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Calculating the Properties of Defects in Semiconductors at Finite Temperatures
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Role of Cation Vacancy-Related Defects in Self-Assembling of CdSe Quantum Dots
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Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors
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First Principles Calculations of Hydrogen Aggregation in Silicon
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Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures
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On the Photo-Ionization Cross-Section of DX Centers
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Imaging and Characterizing Nanoscale Fluctuations in the Distribution of Dopant Atoms by Scanning Tunneling Microscopy
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 230-232Progress in Wide Bandgap Ferromagnetic...

Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides

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Defects and Diffusion in Semiconductors - An Annual Retrospective VII

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Periodical:

Defect and Diffusion Forum (Volumes 230-232)

Pages:

17-46

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.230-232.17

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Online since:

November 2004

Authors:

Stephen J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, Y.H. Heo, M. Ivill, D.P. Norton, Yong Duk Park

Keywords:

Doping Implantation, Gallium Nitride (GaN), Impurity Implantation, Magnetic Semiconductors, Zinc Oxide (ZnO)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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