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Radiation-Induced Defect Formation in Ternary Ge-As-S Vitreous Semiconductors

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Abstract:

A mechanism of g-induced (Co60 g-quanta of 1.25 MeV mean energy) changes in optical properties of ternary As-Ge-S chalcogenide vitreous semiconductors is analysed. It is connected with chemical bond re-switching accompanied by coordination topological defect formation. The origin of these defects for As-Ge-S system is discussed using data of positron annihilation lifetime spectroscopy, IR Fourier reflection measurements and mathematical statistics.

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Periodical:

Defect and Diffusion Forum (Volumes 230-232)

Pages:

67-80

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.230-232.67

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Online since:

November 2004

Authors:

R.Ya. Golovchak, Oleg I. Shpotyuk

Keywords:

Chalcogenide Vitreous Semiconductors, Chemical Bond Re-Switching, Coordination Topological Defects, Radiation-Induced Defects

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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