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High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates

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Abstract:

Epitaxial Pt films were grown on γ-Al2O3/Si (111) substrate by RF-magnetron sputtering. The γ-Al2O3 buffer layers were grown epitaxially using molecular beam epitaxy. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The results of XRD showed that high-quality Pt films were obtained at around 560°C. In addition, the Pt films exhibited a very smooth surface with the root-mean-square (rms) surface roughness is about 0.4 nm.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.181

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Online since:

June 2007

Authors:

Mikinori Ito, Kazuaki Sawada, Makoto Ishida

Keywords:

Epitaxial, Pt, γ-Al2O3

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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