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Instability of OTFT with Organic Gate Dielectrics

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Abstract:

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

407-410

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.407

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Online since:

June 2007

Authors:

Sang Chul Lim, Seong Hyun Kim, Gi Heon Kim, Jae Bon Koo, Jung Hun Lee, Chan Hoe Ku, Yong Suk Yang, Do Jin Kim, Tae Hyoung Zyung

Keywords:

Dielectric, Electronic Devices, Hysteresis, Organic Semiconductor, OTFT, PES, PVP

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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