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New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure

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Abstract:

X-ray absorption fine structure can determine the local structure of most atoms in the periodic table. The great recent improvements in the performance of synchrotron radiation sources and techniques and advances in the simulations of the spectra have opened new opportunities, especially in the study of dilute systems in the soft X-ray range. In this contribution we will show some recent results that demonstrate how semiconductor physics may greatly benefit from such progress. In fact, doping or alloying of semiconductors with light elements, that have K absorption edges in the soft X-ray range, is widely employed to tune semiconductor properties. X-ray absorption fine structure investigations on such systems can give an important contribution towards the understanding and optimization of technological processes.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

473-478

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.473

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Online since:

October 2007

Authors:

Federico Boscherini, D. De Salvador, G. Bisognin, G. Ciatto

Keywords:

Dopant, Hydrogen Complexes, Synchrotron Radiation (XRD), X-Ray Absorption Fine Structure

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] J.J. Rehr and R.C. Albers, Rev. Mod. Phys. Vol. 72 (2000), p.621.

Google Scholar

[2] J. Stöhr: NEXAFS Spectroscopy (Springer-Verlag, Berlin 1992).

Google Scholar

[3] J.C. Knights, T.M. Hayes, and J.C. Mikkelsen, Jr., Phys. Rev. Lett. Vol. 39 (1977), p.712.

Google Scholar

[4] K.C. Pandey, A. Erbil, G.S. Cargill, III, R.F. Boheme and D. Vanderbilt, Phys. Rev. Lett. Vol. 61 (1988), p.1282.

Google Scholar

[5] V. Koteski, N. Ivanovic, H. Haas, E. Holub-Krappe, H. -E. Mahnke, Nucl. Instrum. Meth. in Phys. Res. B Vol. 200 (2003), p.60.

Google Scholar

[6] L. Floreano, G. Naletto, D. Cvetko, R. Gotter, M. Malvezzi, L. Marassi, A. Morgante, A. Santaniello, A. Verdini, F. Tommasini; Review of Scientific Instruments. Vol. 70 (1999), p.3855.

DOI: 10.1063/1.1150001

Google Scholar

[7] A. Ankudinov, B. Ravel, J.J. Rehr, and S. Conradson, Phys. Rev. B Vol. 58 (1998), p.7565.

Google Scholar

[8] S. Della Longa, A. Arcovito, M. Girasole, J. L. Hazemann, and M. Benfatto, Phys. Rev. Lett. Vol. 87 (2001), p.155501.

Google Scholar

[9] F. Boscherini, in Characterization of semiconductor nanostructures and heterostructures, edited by C. Lamberti, Elsevier (2007), in press.

Google Scholar

[10] A. Mattoni and L. Colombo, Phys. Rev. B Vol. 69 (2004), p.45204.

Google Scholar

[11] D. De Salvador, G. Bisognin, M. Di Marino, E. Napolitani, A. Carnera, H. Graoui, M.A. Foad, F. Boscherini and S. Mirabella, Appl. Phys. Lett. Vol. 89 (2006), p.241901.

DOI: 10.1063/1.2402905

Google Scholar

[12] D. De Salvador, G. Bisognin, M. Di Marino, E. Napolitani, A. Carnera, S. Mirabella, E. Pecora, E. Bruno, F. Priolo, H. Graoui, M.A. Foad and F. Boscherini, submitted to J. Vac. Sci. Technol B (2007).

DOI: 10.1116/1.2781760

Google Scholar

[13] A. Vailionis, G. Glass, P. Desjardins, David G. Cahill, and J. E. Greene, Phys. Rev. Lett. Vol. 82 (1999), p.4464.

Google Scholar

[14] G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni and M. Capizzi, Phys. Rev. B Vol. 71 (2005), p.201301.

Google Scholar

[15] A. Amore Bonapasta, F. Filippone, and P. Giannozzi, Phys. Rev. B Vol. 69 (2004), p.115207.

Google Scholar

[16] G. Bisognin, D. De Salvador, E. Napolitani, A. Sambo, A.V. Drigo, M. Berti, A. Polimeni, M. Felici, M. Capizzi, P. Klar, M. Gungherich, G. Bais, F. Jabeen, M. Piccin, F. Martelli, S. Rubini and A. Franciosi, Appl. Phys. Lett. Vol. 89 (2006).

DOI: 10.1063/1.2335508

Google Scholar

[17] A. Amore Bonapasta, F. Filippone, and G. Mattioli, Phys. Rev. Lett. Vol 98 (2007), p.206403.

Google Scholar