Electroluminescence from ZnO/n+-Si Heterojunction

Xiang Yang Ma; Pei Liang Chen; Dong Sheng Li; De Ren Yang

doi:10.4028/www.scientific.net/SSP.131-133.625

Paper Titles

Dislocation Photoluminescence in Silicon and Germanium
p.583

Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application
p.589

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO₂ Layers
p.595

Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics
p.601

The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon
p.607

Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors
p.613

X-Ray Characterization of the Lattice Perfection of Heteroepitaxial SIS Structures
p.619

Electroluminescence from ZnO/n⁺-Si Heterojunction
p.625

Characterization of SiO₂/Si Interface by Cathodoluminescent Method
p.629

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Electroluminescence from ZnO/n+-Si Heterojunction

Electroluminescence from ZnO/n⁺-Si Heterojunction

Abstract:

The ZnO/n+-Si heterojunction has been fabricated via depositing nominally undoped ZnO film by reactive sputtering on a heavily arsenic-doped (n+) silicon substrate. The sputtered ZnO film was n-type in conductivity with an electron concentration of 1.0×1018 cm-3. The current-voltage characteristics indicate that the ZnO/n+-Si heterojunction does not possess rectifying function. Under the forward bias with the negative voltage applied on the n+-Si substrate, the heterojunction emits ultraviolet and broad visible lights characteristics of near-band-edge and defect-related emissions of ZnO, respectively. The EL mechanism has been tentatively explained in terms of the energy-band diagram.