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Defects and Diffusion in Semiconductors X

Defect and Diffusion Forum Volume 272

• Papers
• Abstracts

• p1 New Method to Determine Young’s Modulus of Micro Crystal Based on Raman Spectrometer   [ 204 K ]
  Authors: Sheng Bo Sang
• p7 Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons   [ 349 K ]
  Authors: Xiang Ti Meng, Qiang Huang, Xing Yu Wang, Yong Nan Zheng, Ping Fan, Sheng Yun Zhu
• p15 Solid-State Reaction in Al-Fe Binary System Induced by Mechanical Alloying   [ 689 K ]
  Authors: S.H. Kaytbay, S.F. Moustafa, W.M. Daoush
• p25 Thermal Behaviour of Xenon in a Refractory Metal for Gas Fast Reactor Fuel Elements   [ 371 K ]
  Authors: C. Viaud, G. Carlot, P. Garcia, P. Martin, N. Millard-Pinard, N. Moncoffre, C. Peaucelle, T. Sauvage, N. Toulhoat
• p31 Solid-Phase Diffusion Interaction in Multilayer Thin-Film System Cr/Cu/Ni at Pulse Laser Heating   [ 201 K ]
  Authors: M. Vasylyev, M.M. Nishenko, S.I. Sidorenko, S. Voloshko
• p41 Molecular Dynamics Simulation of Brittle Fracture in Bcc Iron   [ 214 K ]
  Authors: Hong Xian Xie, Chong Yu Wang, Tao Yu
• p51 Diffusion in the AlMo₃ Ordered Intermetallic   [ 261 K ]
  Authors: M.I. Pascuet, Julián R. Fernández, A.M. Monti
• p61 First-Principles Investigation of the Alloying Effect of Mn and Cr in the Kink on the Edge Dislocation in BCC Iron   [ 377 K ]
  Authors: Zheng Chen Qiu, Li Qun Chen
• p71 Mathematical Modeling of Interface Movement during Diffusional Bonding of Surfaces   [ 145 K ]
  Authors: Rabindranath Ray
• p79 Growth Kinetics of Boride Layers: A Modified Approach   [ 778 K ]
  Authors: I. Campos-Silva, M. Ortiz-Domínguez, C. VillaVelázquez, R. Escobar, N. López