Paper Titles
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Development of Ultra High Sensitivity UV Silicon Carbide Detectors
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Silicon Carbide Power Diodes as Radiation Detectors
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Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode
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Radiation Hard Devices Based on SiC
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The Limit of SiC Detector Energy Resolution in Ion Spectometry
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Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
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Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
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Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition
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Radiation Hard Devices Based on SiC

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Abstract:

The effect of irradiation with protons, electrons, neutrons, x-ray radiation and gamma-ray photons as well as with different ions on properties of starting SiC material and devices based on it was studied. The rectifying properties of the diode structures, which degraded as a result of irradiation with high energy particles, were recovered at higher operation temperatures. The transistor structure SiC-based detectors were realized with the signal amplification by a factor of tens under irradiation. The energy resolution of 0.34 %, commensurable with Si-detectors, has been achieved for SiC detectors and is correct for all classes of short range ions. The maximum signal amplitude corresponds, in SiC, to a mean electron-hole pair creation energy of 7.7 eV.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1473-1476

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1473

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Online since:

October 2006

Authors:

Evgenia V. Kalinina, Anatoly M. Strel'chuk, Alexander A. Lebedev, Nikita B. Strokan, Alexander M. Ivanov, G. Kholuyanov

Keywords:

Defect, Detector, Energy Resolution, Fluence, Radiation

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] A.L. Barry, B. Lehman, D. Fritsch, and D. Brauning: IEEE Trans. Nucl. Sci. 38, (1991), p.1111.

Google Scholar

[2] L. W. Aukerman, H. C. Garton, R. K. Willardson, and V. E. Bryson: Silicon Carbide, Ed. by J. R. O'Connor and J. Smiltens (Pergamon, Oxford, 1959), p.388.

Google Scholar

[3] E.W. Mitchell and M. J . Moore: Radiation Damage in Semiconductors (Dunod, Paris, 1965) p.235.

Google Scholar

[4] R.V. Babcock and H.C. Chang: Neutron dosimetry (Vienna, 1963) Vol. 1, p.613.

Google Scholar

[5] P.C. Capera, P. Malinaric, R.B. Campbell, and J. Ostroski: IEEE Trans. Nucl. Sci. (June 1964), p.262.

Google Scholar

[6] V.A. Tikhomirova, O.P. Fedoseeva, and G.F. Kholuyanov: Sov. Physics and Technics of Semiconductors 6 (1972), p.957.

Google Scholar

[7] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W.J. Choyke, A. Schöner, and N. Nordel: Phys. Status Solidi A, 162 (1997), p.199.

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[8] F.H. Ruddy, A.R. Dullo, J.G. Seidel, S. Seshadki, and L.B. Rowland: IEEE Trans. Nucl. Sci. NS-45 (1998), p.536.

Google Scholar

[9] E.V. Kalinina, G.F. Kholuyanov, G.A. Onushkin, D.V. Davydov, A.M. Strel'chuk, A.O. Konstantinov, A. Hallén, A. Yu. Nikiforov, V.A. Skuratov, and K. Havancsak: Semiconductors 38 (2004), p.1223.

DOI: 10.1134/1.1808826

Google Scholar

[10] F. Nava, P. Vanni, C. Lanzieri, and C. Canali: Nucl. Instr. and Meth. A 437 (1999), p.354.

Google Scholar

[11] A.A. Lebedev, A.M. Ivanov, and N.B. Strokan: Semiconductors 38 (2004), p.125.

Google Scholar

[12] A.Y. Nikiforov, P.K. Skorobogatov, D.V. Boychenko, V.S. Figurov, V.V. Luchinin, and E.V. Kalinina. Proceedings RADECS 2003, Noordwijk, The Netherlands, 15-19 September 2003 (2004).

Google Scholar

[13] A. Ivanov, E. Kalinina, G. Kholuyanov, N. Strokan, G. Onushkin, A. Konstantinov, A. Hallén, and A. Kuznetsov: Mat. Sci. Forum 483-485 (2005), p.1029.

DOI: 10.4028/www.scientific.net/msf.483-485.1029

Google Scholar