Paper Titles
Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs
p.925
Fabrication of pn-Junction Diode for N+ Implanted 4H-SiC(0001) Annealed by EBAS
p.929
Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum
p.933
Potential Benefits of Silicon Carbide Zener Diodes Used as Components of Intrinsically Safe Barriers
p.937
4H-SiC High Temperature Spectrometers
p.941
4H-SiC Schottky Array Photodiodes for UV Imaging Application Based on the Pinch-off Surface Effect
p.945
Fabrication and Test of 3C-SiC Electrostatic Resonators
p.949
Study of Dark Currents in 4H-SiC UV APDs with Separate Absorption and Multiplication Regions
p.953
Surface Functionalization of SiC for Biosensor Applications
p.957

4H-SiC High Temperature Spectrometers

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Abstract:

The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170oC by α-particles with energies of 3.9 and 5.5 MeV. Structural peculiarities of thin Al high dose ion implanted layers before and after short high temperature activation annealing were studied by combination of Rutherford back scattering/channeling spectrometry and cross-sectional transmission electron microscopy. The detector structures fabricated on this thin ion implanted p+-n junctions operated in the temperature range of 16-170 oC with reproducible stable spectrometric characteristics. The charge collection efficiency and the energy resolution of detectors improved with rising temperature up to 170 oC, that was obtained in SiC detectors for the first time.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

941-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.941

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Online since:

September 2007

Authors:

Evgenia V. Kalinina, Nikita B. Strokan, Alexander M. Ivanov, A. Sadohin, A. Azarov, V. Kossov, R. Yafaev, S. Lashaev

Keywords:

Defect, Detector, Diffusion Length, Energy Resolution, Radiation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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