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Growth of an Inx(OOH,S)y Buffer Layer and Its Application to Cu(In,Ga)(Se,S)2 Solar Cells

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Abstract:

As an alternative to a CdS buffer layer for Cu(In,Ga)Se2-based solar cells, we prepared In-based buffer layers using a chemical bath deposition method. XPS and XRD analyses revealed that the In-based buffer layers contained In2S3 and InOOH phases. Compared with CdS film, the In-based film, Inx(OOH,S)y, had higher optical transmittance and a shorter absorption edge. The Cu(In,Ga)(Se,S)2 solar cell with the Inx(OOH,S)y buffer layer had better photovoltaic properties than that with a conventional CdS buffer layer. The conversion efficiency of the best Cu(In,Ga)(Se,S)2 solar cell with Inx(OOH,S)y buffer layer was 12.55 % for an active area of 0.19 cm2.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1681-1684

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1681

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Online since:

January 2005

Authors:

Ki Hwan Kim, Liudmila.L. Larina, Kyung Hoon Yoon, Makoto Konagai, Byung Tae Ahn

Keywords:

Cd-Free Buffer, Cu(In,Ga)Se2, Inx(OOh,S)y, Solar Cell

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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