Defects in Semiconductors 14
Materials Science Forum Volumes 10 - 12
doi:10.4028/www.scientific.net/MSF.10-12
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p193
Capacitance and Current Spectroscopy of Perpendicular Transport in Compensated GaAs-GaAlAs Superlattices
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298 K
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Authors: H. Sibille, J.F. Palmier, H. Le Person
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p199
Characterization of Electron Traps in GaAs-GaAlAs Superlattices
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224 K
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Authors: F. Sillion, A. Mauger, J.C. Bourgoin, B. Deveaud, A. Regreny, D. Stiévenard
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p205
Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE
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908 K
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Authors: F.A. Ponce, D.K. Biegelsen, J.C. Tramontana, A.J. Smith
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p211
Atomic Imaging of Surface Defects on Si
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353 K
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Authors: J.E. Demuth, R.J. Hamers, R.M. Tromp
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p217
Influence of Strain on Silicon Surface and Silicon Oxide Interface Reconstruction
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326 K
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Authors: A. Ourmazd, D.W. Taylor, J. Bevk, B.A. Davidson, Leonard C. Feldman, J.P. Mannaerts
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p223
Deep Level at Semiconductor Surfaces
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183 K
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Authors: W. Platen, D. Kohl, K.A. Brauchle, K. Wolter
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p229
Charged Defect States at Silicon Grain Boundaries
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278 K
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Authors: F.J. Stützler, L. Tapfer, H.J. Queisser
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p235
Bulk and Grain Boundary Defects in Polycrystalline ZnO
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275 K
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Authors: Felix Greuter, G. Blatter, M. Rossinelli, F. Schmückle
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p241
The Role of Defect Production at Surface and Interface of CdHgTe and ZnHgTe
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283 K
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Authors: Tsunemasa Taguchi, Toshiyuki Terada, Osamy Ohno, Tokuhito Sasaki, Muneyoshi Suita, Akio Hiraki
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p247
Electronic Structure of As and P Antisite Defects and Ga Vacancy in GaP and GaAs
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218 K
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Authors: S. Biernacki
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p253
EPR Spectra of AsGa Aggregates in GaAs
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143 K
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Authors: Eugenia Kaczmarek
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p259
Endor-Investigation of the Ga Vacancy in GaP
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184 K
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Authors: J. Hage, J. Niklas, Johann Martin Spaeth
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p265
Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation
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303 K
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Authors: M. Stucky, C. Corbel, B. Geffroy, P. Moser, Pekka J. Hautojärvi
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p271
Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
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195 K
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Authors: T.A. Kennedy, N.D. Wilsey, Paul B. Klein, R.L. Henry
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p277
Electronic Structure and Positron States at Vacancies in Semiconductors
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255 K
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Authors: M.J. Puska