Defects in Semiconductors 14
Materials Science Forum Volumes 10 - 12
doi:10.4028/www.scientific.net/MSF.10-12
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p283
Search for the Full Atomic Structure of El2 in GaAs
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330 K
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Authors: T.A. Kennedy
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p293
Bistability and Metastability of VGa in GaAs
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289 K
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Authors: G.A. Baraff, M. Schluter
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p299
EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
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179 K
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Authors: Hans Jürgen von Bardeleben, J.C. Bourgoin, A. Miret
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p305
A Model for the Atomic Configuration of the EL2 Defect in GaAs
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192 K
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Authors: D. Stiévenard, Hans Jürgen von Bardeleben, J.C. Bourgoin, A.M. Huber
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p311
The Arsenic Antisite Defect in GaAs and Its Relation to EL2
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270 K
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Authors: B.K. Meyer, D.M. Hofmann, Johann Martin Spaeth
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p317
Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
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269 K
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Authors: W. Kuszko, P.J. Walczak, P. Trautman, Maria Kaminska, Jacek M. Baranowski
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p323
Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
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276 K
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Authors: Yasunori Mochizuki, Toshiyuki Ikoma
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p329
The Energy Position of the EL2 Ground State in GaAs
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247 K
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Authors: P. Omling, P. Silverberg, L. Samuelson
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p335
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
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194 K
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Authors: M. Lopez, E. Abril, B. Jimenez, M. Aguilar, Elias Muñoz Merino
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p341
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
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179 K
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Authors: T. Figielski
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p347
Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
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277 K
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Authors: J.C. Parker, Ralph Bray
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p353
Resonant Raman Scattering at Point Defects in GaAs
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231 K
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Authors: Matthias Scheffler, Udo Scherz
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p359
Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
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182 K
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Authors: B. Dischler, Franziska Fuchs, Ulrich Kaufmann
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p365
ESR Studies of Semi-Insulating GaAs Crystals
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263 K
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Authors: J. Bittebierre, R.T. Cox, E. Molva
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p371
EL2 Quenching Behaviour in Infrared GaAs Transmission Images
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254 K
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Authors: M. Castagne, J.P. Fillard, J. Bonnafe, P. Gall