Shallow Impurities in Semiconductors IV
Materials Science Forum Volumes 65 - 66
doi:10.4028/www.scientific.net/MSF.65-66
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p307
On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon
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269 K
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Authors: Werner Puff, S. Dannefaer
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p313
The p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium
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500 K
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Authors: G. Piao, R.A. Lewis, P. Fisher
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p323
Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium
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322 K
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Authors: G.J. Takacs, P. Fisher, C.A. Freeth
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p329
Spectral Dependence of the Shallow Impurity Optical Absorption Cross Section in Germanium
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133 K
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Authors: E.G. Chirkova, Yu.P. Druzhinin
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p333
Resonance States of a Shallow Acceptor in Degenerate Anisotropic Band Semiconductor
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209 K
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Authors: V.G. Golubev, G.I. Kropotov, S.A. Proshin, V.P. Vasiliev
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p339
Bistability of Thermal Donors in Germanium Investigated by Far-IR Spectroscopy
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268 K
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Authors: Paul Clauws, J. Vennik
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p345
Shallow Impurity Spectroscopy Using Cyclotron Resonance Lasers
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257 K
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Authors: Yu.B. Vasilyev, Yu.L. Ivanov
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p351
The Influence of Metallic Contamination on the Lattice Relaxation of GexSi1-x Epitaxial Alloys
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228 K
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Authors: V. Higgs, Gordon Davies, R. Kubiak
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p357
Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus
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180 K
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Authors: P.E. Dyshlovenko, A.A. Kopylov, K.L. Lutovich, V.A. Vasilijev, A.A. Shakmaev
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p363
A FIR Photo-Hall Study of the 1s-2p-1 Shallow Donor Transition in n-GaAs
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251 K
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Authors: J. Burghoorn, A. v. Klarenbosch, T.O. Klaassen, W.Th. Wenckebach, C.T. Foxon
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p369
Electronic Structure of Be-Doped GaAs
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236 K
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Authors: L.M.R. Scolfaro, E.A. Menezes, C.A.C. Mendonça, J.R. Leite, J.M.V. Martins
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p375
High Resolution Magneto-Optical Studies of the Donors in MOCVD InP
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231 K
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Authors: P.D. Wang, S.N. Holmes, R.A. Stradling
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p381
Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs
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287 K
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Authors: P.D. Wang, S.N. Holmes, R.A. Stradling, R. Droopad, Ian T. Ferguson, A. d'Oliveira, S.D. Parker, R.L. Williams
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p389
The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy
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397 K
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Authors: M. Boukerche, S. Sivananthan, P.S. Wijewarnasuriya, S.S. Yoo, M. DeSouza, I.K. Sou, Matthias Lange, J.P. Faurie
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p397
Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/AlxGa1-xAs Heterostructures
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274 K
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Authors: W. Wilkening, Ulrich Kaufmann