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Articles by author: A. Claverie

• Boron Diffusion in Pre-Amorphised Silicon: Interactions with the End of Range Defects
  Published in: Diffusion in Silicon (p11)
• Crystallisation Behaviour of Amorphous Thin Si Films Produced by Low Pressure Chemical Vapor Deposition
  Published in: Polycrystalline Semiconductors III (p293)
• Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p357)
• Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p599)
• Energetics of Extrinsic Defects in Si and their Role in Nonequilibrium Dopant Diffusion
  Published in: Defects and Diffusion in Semiconductors (p199)
• Evolution of Quantum Electronic Features with the Size of Silicon Nanoparticles Embedded in a SiO₂ Layer Obtained by Low Energy Ion Implantation
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p71)
• From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p25)
• Influence of Growth Rate and Temperature on the Structure of Low Temperature GaAs
  Published in: Defects in Semiconductors 16 (p1045)
• Interactions between Dopants and End-of-Range Defects in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p195)
• Materials Science Issues for the Fabrication of Nanocrystal Memory Devices by Ultra Low Energy Ion Implantation
  Published in: Diffusion in Solids and Liquids (p531)
• Photovoltaic Solar Cells: State of the Art, National Strategies and Perspectives
  Published in: Polycrystalline Semiconductors III (p441)
• Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p303)
• Thermal Evolution of Extrinsic Defects in Ion Implanted Silicon: Current Understanding and Modelling
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p201)