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Articles by author: A.V. Frantskevich

• Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p91)
• Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p161)
• Formation of the Buried Insulating Si_xN_y Layer in the Region of Radiation Defects Created by Hydrogen Implantation in Silicon Wafer
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p187)
• Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p571)
• SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p195)
• Structure and Electrical Properties of Nanocrystalline CdS_0.2 Se_0.8 Films Sputtered on Substrates with a Silver Sublayer
  Published in: Functional Nanomaterials for Optoelectronics and other Applications (p239)