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Articles by author: Albrecht Winnacker

• [01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2004 (p307)
• 6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2006 (p219)
• Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p397)
• Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors
  Published in: Defects in Semiconductors 18 (p987)
• Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
  Published in: Silicon Carbide and Related Materials 2001 (p131)
• An Improved X-Ray Image Plate Detector for Diffractometry
  Published in: European Powder Diffraction 4 (p107)
• Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
  Published in: Silicon Carbide and Related Materials 2003 (p787)
• Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p445)
• Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb³⁺, Dy³⁺ and Eu³⁺) a-SiC Thin Films Prepared by rf Magnetron Sputtering
  Published in: Silicon Carbide and Related Materials 2005 (p663)
• Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p341)
• Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x(AlN)_x Films
  Published in: Silicon Carbide and Related Materials 2009 (p263)
• Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
  Published in: Silicon Carbide and Related Materials - 1999 (p71)
• Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p95)
• Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
  Published in: Silicon Carbide and Related Materials - 2002 (p67)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)