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Articles by author: Alexander M. Ivanov

• 4H-SiC High Temperature Spectrometers
  Published in: Silicon Carbide and Related Materials 2006 (p941)
• 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 ºC
  Published in: Silicon Carbide and Related Materials 2008 (p849)
• A Thermovision Method for Studying Deformation Kinetics of Materials and Structure Elements
  Published in: Measurement Technology and Intelligent Instruments VI (p27)
• Deep Levels of Thermal Defects in High Resistivity Silicon
  Published in: Defects in Semiconductors I (p277)
• High Energy Resolution Detectors Based on 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p1029)
• Impact Ionization in 4H-SiC Nuclear Radiation Detectors
  Published in: Silicon Carbide and Related Materials 2009 (p1077)
• Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation
  Published in: Silicon Carbide and Related Materials 2004 (p1025)
• N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle Detectors
  Published in: Silicon Carbide and Related Materials 2001 (p1439)
• Operation of Al-Implanted SiC Nuclear Detectors Subjected to High Radiation Fluences at Temperatures of up to 250 ºC
  Published in: Silicon Carbide and Related Materials 2008 (p853)
• p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
  Published in: Silicon Carbide and Related Materials - 2002 (p969)
• Radiation Hard Devices Based on SiC
  Published in: Silicon Carbide and Related Materials 2005 (p1473)
• Radiation Hardness of Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p957)
• Radiation Hardness of Wide-Bandgap Materials as Exemplified by SiC Nuclear Radiation Detectors
  Published in: Silicon Carbide and Related Materials 2011 (p549)
• The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
  Published in: Silicon Carbide and Related Materials 2007 (p1219)
• The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation
  Published in: Silicon Carbide and Related Materials 2006 (p961)