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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Andreas Magerl
13 papers on 1 page:
1
[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
Published in:
Silicon Carbide and Related Materials 2004
(p307)
In Situ
Observation of Oxygen Precipitation in Silicon with High Energy X-Rays
Published in:
Gettering and Defect Engineering in Semiconductor Technology XIII
(p437)
In Situ
Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction
Published in:
Silicon Carbide and Related Materials 2008
(p23)
6H-SiC Crystals Grown in [015] and [001] Directions Characterized by High Energy Triple-Axis X-Ray Diffraction
Published in:
Silicon Carbide and Related Materials 2006
(p219)
High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
Published in:
Silicon Carbide and Related Materials - 2002
(p289)
In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
Published in:
Silicon Carbide and Related Materials 2006
(p267)
In-Situ Er-Doping of SiC Bulk Single Crystals
Published in:
Silicon Carbide and Related Materials 2003
(p723)
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
Published in:
Silicon Carbide and Related Materials 2003
(p111)
Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using
In Situ
High Energy X-Ray Diffraction
Published in:
Silicon Carbide and Related Materials 2009
(p29)
Structural Defects in SiC Crystals Investigated by High Energy X-Ray Diffraction
Published in:
Silicon Carbide and Related Materials 2003
(p339)
The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction
Published in:
Gettering and Defect Engineering in Semiconductor Technology XI
(p631)
Thermal Expansion Coefficients of 6H Silicon Carbide
Published in:
Silicon Carbide and Related Materials 2007
(p517)
X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC
Published in:
Silicon Carbide and Related Materials 2000
(p287)
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