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CONFERENCE
12/9/2012 - 12/12/2012
ACAM7: The 7th Australasian Congress on Applied Mechanics
11/16/2012 - 11/18/2012
2nd International Conference on Manufacturing Engineering and Automation (ICMEA2012)
11/16/2012 - 11/18/2012
more...
Articles by author: Björn Magnusson
38 papers on 3 pages:
1
[2]
[3]
[next]
A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
Published in:
Silicon Carbide and Related Materials - 2002
(p737)
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
Published in:
Silicon Carbide and Related Materials 2003
(p473)
As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
Published in:
Silicon Carbide and Related Materials 2000
(p365)
Characterisation and Defects in Silicon Carbide
Published in:
Silicon Carbide and Related Materials 2001
(p9)
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
Published in:
Silicon Carbide and Related Materials 2001
(p593)
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
Published in:
Silicon Carbide and Related Materials 2005
(p575)
Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
Published in:
Silicon Carbide and Related Materials 2007
(p405)
Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p423)
Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
Published in:
Silicon Carbide and Related Materials 2007
(p401)
Defects in High-Purity Semi-Insulating SiC
Published in:
Silicon Carbide and Related Materials 2003
(p437)
Defects in Semi-Insulating SiC Substrates
Published in:
Silicon Carbide and Related Materials - 2002
(p45)
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Published in:
Silicon Carbide and Related Materials 2005
(p527)
Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
Published in:
Silicon Carbide and Related Materials 2001
(p509)
Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure
Published in:
Silicon Carbide and Related Materials 2001
(p1469)
Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Published in:
Silicon Carbide and Related Materials - 2002
(p21)
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