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Articles by author: C. Fabrizio Pirri

• 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
  Published in: Silicon Carbide and Related Materials 2008 (p647)
• Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p455)
• Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials 2003 (p1081)
• Hydrogenated Amorphous Silicon Based Alloy: a-Si_1-xC_x:H
  Published in: Hydrogenated Amorphous Silicon (p385)
• Physical Properties of Boron-Nitride and Carbon-Nitride Films Deposited by Sputtering
  Published in: Defect and Diffusion Forum Vols. 134-135 (p3)
• Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations
  Published in: Silicon Carbide and Related Materials 2010 (p453)
• SNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD Diamond
  Published in: Silicon Carbide and Related Materials 2005 (p1587)