Papers by Author: C. Hruanun

Abstract: Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

Abstract: In this report, we present sputtered zinc oxide (ZnO) thin films grown with different argon (Ar) and oxygen (O2) gas-timing sequence. Metallic zinc (Zn) with 5N-purity was used as a sputtering target, while Ar and O2 of 6N-purity were used as the bombard and reactive gases, respectively. The crystalline orientation, surface morphology, chemical composition, optical and electrical properties of deposited ZnO thin films were determined by XRD,AFM and UV-VIS measurement, respectively. The XRD result implied that deposition ZnO thin films at different O2 gas-timing control corresponded to the (002) plane of hexagonal ZnO structure at 2Ө = 34.4◦. Furthermore, when the reactive time of O2 was increased, the transmittance of ZnO thin films exhibited the energy gap increase from ~2.95 to ~3.18 eV, whereas the surface roughness was found to decrease. Finally, ZnO thin films were oxidized after the deposition.

Abstract: The fabrication and characterizations of nanocrystal-ZnO thin film used as active layer of MSM-photodetector structure are reported. The ZnO thin film were successfully sputtered on SiO2/Si substrates without heating or annealing processes by using a novel reactive gas-timing technique. In our experiment, the ZnO thin film properties with different gas-timing ratio of Ar/O2 were investigated. For fabricating of UV detector, the Al interdigitate electrode was deposited on SiO2/Si substrate by DC sputtering process and ZnO thin film was deposited as active layer. The response wavelength peak occurs at around 380 nm corresponding to ZnO energy bandgap of 3.2 eV .The I-V measurements indicates the Schottky behavior of ZnO on Al contact.

Abstract: Two different viscous coating materials, which are Polydimethylsiloxane (PDMS) mixed with 10%wt of Dicumylperoxide (DCP), and Semifluorinate Silane (SFS), were applied to silicon micro-asperity. The cosine’s Young and viscosity of those coating materials are -0.3584,-0.3496 and 3.176x10-3, 1.339 x10-3 Pas, respectively. The rough surfaces with nine asperity shapes were studied. The results shown that, pillar shape has an effect on water contact angle (WCA): Stripe asperity cannot make the average WCA greater than 150. When consider the pillar asperity, the WCA falls between 152 and 157, which exhibits a superhydrophobic surface property. However, actual WCA of the micro-asperity coated with PDMS+10%wt of DCP is lower than that coated with SFS around 1 to 7. High viscous material makes the asperity size bigger than the design and decreases the WCA: the low viscous material is more suitable for coating on the asperities.

Abstract: This work investigates changes in the chemical composition of InON thin films, grown by reactive gas-timing rf magnetron sputtering with different O2:N2 timing ratio characterized by Auger Electron Microscope (AES), Raman Spectroscopy which are well correlated with the electrical properties of films. The existence of nitrogen and oxygen in the deposited InON thin films was revealed by AES. Two Raman active optical phonons have been clearly observed and assigned to InN E1(TO) at ~470 cm-1 and E1(LO) at ~570 cm-1 and also shifted with different O2:N2 timing ratio. The carrier mobility of InON thin films was decreased when the ratio of O2:N2 timing is increased.

Abstract: This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost.

Abstract: The on-chip platinum micro-heater prototypes for thermal cycling equipped with platinum temperature sensor are fabricated. The device has been designed, fabricated and characterized to explore the feasibility of the micro-heater for a fully integrated disposable lab-on-a-chip with the PCR module. The on-chip micro-heater demonstrates that the temperature transitions are shorter by comparison with the conventional PCR temperature routines.

Abstract: In this work a micro flow sensor, using a double gate Ion Sensitive Field Effect Transistor (ISFET) and two metal electrodes, for fluid flow rate measurement in micro-channels were fabricated and demonstrated. By the channel fabrication the molds were patterned reversely on a silicon wafer using Deep Reactive Ion Etcher (DRIE). The double gate ISFET and two metal electrodes were placed on the mold in the distance 15 millimeters. The channels were formed using polydimethylsiloxane (PDMS) from the mold with the width 1000 and 2000 micrometer and the depth of 250 micrometer. After removing PDMS from the mold the channel was bonded with glass substrate by RF plasma technique. By the verification of flow sensors working range water and one mole of sodium nitrate solution were alternated in flow channel. The fluid flow rate were compared with the flow rate from weighing. It found from the comparison that the high deviation was found at low flow rate. Furthermore, the deviation depends also on the dimension of the flow channel.

Abstract: In this study, we demonstrate the disposable polydimethylsiloxane (PDMS) microchip provided for DNA amplification. The device consists of two main parts. The first part is PDMS/glass stationary chamber, the other part is a temperature-control microdevice on SiO2/Si substrate. This device consists of a thin film Pt-microheater and a Pt-temperature sensor, which were fabricated with CMOS compatible process. The performance of the device in the DNA amplification shows that, with 10 μl of PCR mixture volume, the approximately 700 bp DNA were successfully amplified within 50 minutes by 30 PCR cycles. The amplified products were comparable with those of a conventional method using electrophoresis. The PCR chip is also suitable for mass production.

Abstract: The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique. The 100 nm thick of AlON films were deposited with 200 watts r.f. power and the substrate temperature is maintained at room temperature by the technique of gas-timing which varying flow-in sequence of high purity of Ar (99.999%) and N2 (99.9999%) gases fed into the sputtering chamber at 10:90 (sec) ratio. The composition and crystal orientation of AlON films affected by gas-timing of Ar and N2 were analyzed by Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD). The oxygen atoms revealed by AES formed into a corporation in films was studied. This suggests that the oxygen contamination formed as AlOXNY compound may due to the residual oxygen in base pressure of 10-7 mbar and higher reactivity of oxygen in the reactor compared to nitrogen. The gas-timing technique used in the sputtering growth system shows the advantage of the oxygen quantity control, while the general sputtering process (without gas-timing technique) shows an increase of the oxygen composition depended on film thickness. The characterizations results clearly indicate that the gas-timing r.f. magnetron sputtering technique plays an important role to control the incorporation of oxygen and to form the nanocrystal-aluminum oxynitride films which very attractive for various sensors applications.