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Papers by Author: C.R. Abernathy

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Prospects of Potential Semiconductor Spin Detectors

Authors: W.M. Chen, I.A. Buyanova, Y. Oka, C.R. Abernathy, Stephen J. Pearton

Abstract: We review our recent experimental findings by optical orientation spectroscopy that show efficient spin relaxation within semiconductor spin detectors to be an important factor limiting efficiency of spin injection in spin light-emitting structures based on ZnCdSe/ZnMnSe and InGaN/GaMnN. We provide evidence for the physical mechanism responsible for the observed efficient spin relaxation that accompanies momentum and energy relaxation of excitons/carriers. These findings call for increasing efforts in suppressing spin relaxation in spin detectors.

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Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides

Authors: Stephen J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, Y.H. Heo, M. Ivill, D.P. Norton, Yong Duk Park

Effect of In-Situ Chemical Surface Treatments on AlN/SiC Interfacial Contamination

Authors: D.O. Stodilka, B.P. Gila, C.R. Abernathy, E. Lambers, F. Ren, Stephen J. Pearton

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Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations

Authors: Michael Stavola, J.-F. Zheng, Y.M. Cheng, C.R. Abernathy, Stephen J. Pearton

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Diffusion of Hydrogenin Semiconductors, and its Association with Defects and Impurities

Authors: Stephen J. Pearton, C.R. Abernathy, F. Ren

The Role of Hydrogen in UHV Growth of III-V Semiconductors

Authors: C.R. Abernathy

Unintentional Hydrogenation of III-V Semiconductors during Device Processing

Authors: Stephen J. Pearton, C.R. Abernathy, W.S. Hobson, U.K. Chakrabarti, J. Lopata, D.M. Kozuch, Michael Stavola

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Passivation of Shallow Acceptors in Si and GaAs by Annealing in H₂

Authors: I.A. Veloarisoa, D.M. Kozuch, Michael Stavola, R.E. Peale, G.D. Watkins, Stephen J. Pearton, C.R. Abernathy, W.S. Hobson

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Role of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors

Authors: F. Ren, T.R. Fullowan, J.R. Lothian, P.W. Wisk, C.R. Abernathy, R.F. Kopf, A.B. Emerson, Stephen J. Pearton, S.W. Downey

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Anomalous Damage Depths in Low-Energy Ion Beam Processed III-V Semiconductors

Authors: Stephen J. Pearton, F. Ren, T.R. Fullowan, R.F. Kopf, W.S. Hobson, C.R. Abernathy, A. Katz, U.K. Chakrabarti, V. Swaminathan

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