De Sheng Fu | Scientific.Net

Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD

Authors: Naonori Sakamoto, Haruka Sugiura, De Sheng Fu, Naoki Wakiya, Hisao Suzuki

Abstract: InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.

209

Comparison of Thermal Stability of Epitaxially Grown (La_0.5Sr_0.5)CoO₃ and (La_0.6Sr_0.4)MnO₃ Thin Films Deposited on Si Substrate

Authors: Shigeki Sawamura, Naonori Sakamoto, De Sheng Fu, Kazuo Shinozaki, Hisao Suzuki, Naoki Wakiya

Abstract: Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

160

Tunable Barium Strontium Titanate Thin Films by CSD

Authors: Dai Iwasaki, Miho Maruyama, Naonori Sakamoto, De Sheng Fu, Naoki Wakiya, Hisao Suzuki

Abstract: BaxSr1-xTiO3 (BST) thin films were deposited by modified CSD, in which partially hydrolyzed Ti-alkoxide was reacted with Ba-Sr precursor solution to form highly polymerized BST precursor solutions, leading to the better electrical properties of the resultant thin films. BST precursor solutions of 0.1 M were prepared to deposit BST thin layers of 17nm ~ 20nm for one dip-coating operation with different barium to strontium ratio of Ba/Sr = 90/10, 70/30 and 50/50. Modified CSD-derived BST thin films were deposited on a Si wafer with Pt electrode or CSD-derived LaNiO3 (LNO) seeding layer with preferred orientation. BST thin films exhibited ferroelectric or paraelectric properties, depending upon the Ba/Sr ratio. Better electrical properties for the BST thin films were observed on a LNO seeding layer. Maximum tunability of our BST film was 41 % at 1MHz.

156

Effects of β-diketone Addition on Crystallinity of Photo-Assisted Alkoxy-Derived Zirconia Thin Films

Authors: Kaori Nishizawa, Takeshi Miki, Kazuyuki Suzuki, De Sheng Fu, Kazumi Kato

125

Composition Dependence of Lead-Free Ferroelectric Ba(Ti,Zr)O₃ Thin Films Fabricated by Chemical Solution Deposition Process

Authors: Kiyotaka Tanaka, Kazuyuki Suzuki, De Sheng Fu, Kaori Nishizawa, Takeshi Miki, Kazumi Kato

57

Construction of MFIS Structure Using Alkoxy-Derived (Y,Yb)MnO₃ Thin Films

Authors: Kazuyuki Suzuki, Kiyotaka Tanaka, De Sheng Fu, Kaori Nishizawa, Takeshi Miki, Kazumi Kato

49

Polarization Switching in CaBi₄Ti₄O₁₅ Ferroelectric Thin Films

Authors: De Sheng Fu, Kazuyuki Suzuki, Kazumi Kato

41

Control of Crystallinity of Alkoxy-Derived Zirconia Thin Films by UV Irradiation

Authors: Kaori Nishizawa, Takeshi Miki, Kazuyuki Suzuki, De Sheng Fu, Kazumi Kato

125

Ferroelectric Properties of (Y,Yb)MnO₃ Thin Films Prepared Using Alkoxide Solutions

Authors: Kazuyuki Suzuki, De Sheng Fu, Kaori Nishizawa, Takeshi Miki, Kazumi Kato

77

Dielectric, Ferroelectric, Piezoelectric Properties of Highly Oriented Pb(Zr_0.3Ti_0.7)O₃ Thin Films

Authors: De Sheng Fu, Yasutaka Yoshimi, Hisao Suzuki, Kenji Ishikawa

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Papers by Author: De Sheng Fu