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Articles by author: Dieter Hofmann

• Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p397)
• Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 1999 (p445)
• Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
  Published in: Silicon Carbide and Related Materials - 1999 (p71)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)
• Equilibrium Growth Morphologies of SiC Polytypes
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p425)
• Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p623)
• Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p43)
• Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth
  Published in: Silicon Carbide and Related Materials - 1999 (p31)
• Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions
  Published in: Silicon Carbide and Related Materials - 1999 (p39)
• Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
  Published in: Silicon Carbide and Related Materials 2000 (p11)
• Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
  Published in: Silicon Carbide and Related Materials 2001 (p127)
• Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing
  Published in: Silicon Carbide and Related Materials 2000 (p307)
• Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p57)
• Molecular Modeling and Experimental Investigation of Hydrolytically Degradable Polymeric Biomaterials
  Published in: 5th FORUM ON NEW MATERIALS PART E (p16)
• Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials 2000 (p65)