Articles by author: Dieter Hofmann
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On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
Published in: Silicon Carbide and Related Materials 2001 (p139) -
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
Published in: Silicon Carbide, III-Nitrides and Related Materials (p33) -
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Published in: Silicon Carbide and Related Materials - 2002 (p51) -
Quantitative High-Resolution Electron Microscopy of Interfaces
Published in: Intergranular and Interphase Boundaries in Materials (p23) -
Stability Criteria for 4H-SiC Bulk Growth
Published in: Silicon Carbide and Related Materials 2000 (p25) -
Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth
Published in: Silicon Carbide, III-Nitrides and Related Materials (p69) -
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Published in: Silicon Carbide and Related Materials 2000 (p49) -
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality
Published in: Silicon Carbide and Related Materials 2001 (p1445) -
Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes
Published in: Silicon Carbide and Related Materials - 1999 (p107)