Papers by Author: Efstathios K. Polychroniadis

Abstract: A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.

Abstract: Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.

Abstract: We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

Abstract: Quaternary semiconductor alloys based on GaSb are suitable for thermo-photo voltaic cell applications as they have low and adjustable band-gap. However, they exhibit phase separation which destroys band-gap uniformity. In this work, GalnAsSb thin films grown on GaSb vicinal substrates were studied by Transmission Electron Microscopy, in order to determine the influence of the growth parameters on phase separation. It was found that the coatings exhibit two types of compositional modulation, one parallel and the other forming an angle with the substrate plane.

Abstract: Zinc hot-dip galvanizing is one of the most effective methods for the corrosion protection of ferrous substrates. However, the failure of zinc coatings is possible when exposed to harsh environments for rather long periods. The application of a thin diamond like carbon (DLC) film on the top of the zinc coating might be a promising method for promoting their corrosion resistance. In the present work, a DLC thin film was deposited on zinc galvanized coatings by Plasma Enhanced Chemical Vapor Deposition. The as-formed film was composed of nanostructured and amorphous areas. The electron diffraction patterns acquired from the nanograins correspond to carbon phases with d-spacing ranging from diamond to graphite. Additionally, after 18 days of exposure in a simulated marine atmosphere, the DLC coated samples were proven to be more resistant than the naked galvanized coatings indicating its potential to improve the corrosion resistance of galvanized ferrous materials.

Abstract: Three types of nanolayered Pd-based metal/p-4H SiC systems, Au/Pd, Au/Pd/Al and Au/Pd/Ti/Pd have been investigated and compared to Pd monolayered metallization regarding the electrical and thermal properties. The lowest contact resistivity of 2.8x10-5 .cm2 has been achieved with the Au/Pd/Ti/Pd contact. This contact exhibits excellent thermal stability during long-term heating at temperature of 700oC and at operating temperatures up to 450oC. The surface morphology investigation has shown that despite the observed decrease, the palladium agglomeration has been not avoided completely in the same contact. The dominated surface roughness was measured to be 75 nm. However, the formation of dendrites in certain places leads to increase the surface roughness to 125 nm. The structural analysis revealed that palladium silicides are formed at the interface metal/p-4H SiC which affects on decrease of the barrier height in more than two times and conversion of the contact from Schottky into ohmic.

Abstract: Zirconium nitrides (ZrN) coatings have shown better quality in comparison to titanium nitrides (TiN) ones regarding the application in the mechanical processing of aluminum and titanium alloys. This work presents the results from investigation on properties of ZrN-based coatings intended for industrial application. The ZrN and ZrTiN hard coatings in a thickness of (3 5) m were obtained on stainless steel substrates by cathodic arc evaporation method. The coating hardness in the range of 25-32 GPa was evaluated using the Vickers measurement technique. The coating properties were studied in relation to the surface morphology by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). The analyses showed that the number and size of the macroparticles decrease when N2 pressure increases in the deposition chamber. X-ray diffraction analysis (XRD) was performed to identify the crystallographic structure, preferred orientation and stress of the ZrN coatings.

Abstract: This work presents some recent results on the 3C-SiC structural defects, studied by Transmission Electron Microscopy (TEM). The samples studied were grown in several laboratories, using different methods. Commonly used methods for growth are Sublimation Epitaxy (SE), Physical Vapour Transport (PVT), Continuous Feed Physical Vapour Transport (CF-PVT), Chemical Vapour Deposition (CVD), and Liquid Phase Epitaxy (LPE). In all these methods, for both bulk and epitaxial layer growth, substrates from other polytypes are exploited like the common hexagonal polytypes 4H- and 6H-SiC or 3C-SiC seeds both in (111) and (100) orientation.

Abstract: The present work investigates the influence of the synthesis conditions of specific ferrites (Ni0,30Cu0.07Zn0,63)Fe2O4, prepared with the mixed oxide process, on their microstructural homogeneity. Segregation was found inside the grains, in the form of clustering or compositional modulation. Both types of segregation, which are not observed in all grains or all samples, seem to be related to the stress of the material as well as the specific orientation of the individual grains, where the segregation appeared. The reason for this assumption, which will be discussed, is that after annealing, where stress relaxation takes place, the segregation completely disappeared.

Abstract: The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural properties by high resolution transmission electron microscopy, we focus on the electronic structure. We show that one unit cell of 8H does not behave like a single type-II quantum well but, rather, like two type-II quantum wells of 3C coupled by a thin hexagonal barrier. Using a transfer matrix method, we compute the corresponding transition energies, taking into account the effect of the valence band offset and built-in electric field. A good agreement is found with the experimental data collected from low temperature photoluminescence spectroscopy.