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Papers by Author: G. Langouche

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Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C

Authors: Ulrich Wahl, J.G. Correia, G. Langouche, J.G. Marques, A. Vantomme, the ISOLDE Collaboration the ISOLDE Collaboration

1503

Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized ⁵⁷Mn⁺ Ion Beam at Isolde

Authors: G. Weyer, S. Degroote, M. Fanciulli, V.N. Fedoseyev, G. Langouche, V.I. Mishin, A.-M. Van Bavel, A. Vantomme, the ISOLDE Collaboration the ISOLDE Collaboration

437

Transition-Metal Silicide Layer Formation, the Phases of Mixed Silicides

Authors: I. Dézsi, Cs. Fetzer, I.S. Szűcs, J. Dekoster, G. Langouche

339

The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si

Authors: A.-M. Van Bavel, S. Degroote, A. Vantomme, Andre Stesmans, G. Langouche

1515

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

Authors: M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes, A.-M. Van Bavel, G. Langouche, Andre Stesmans, Paul Clauws

1147

Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy

Authors: H. Bemelmans, G. Borghs, G. Langouche

1105

In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Mössbauer Spectroscopy Study

Authors: A.-M. Van Bavel, G. Langouche

827

Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation

Authors: G. Langouche, M.F. Wu, J. De Wachter, H. Pattyn, A.-M. Van Bavel

803

Co-Acceptor Complexes in Si

Authors: A.-M. Van Bavel, G. Langouche

267

Mössbauer Studies of Ion Implanted Systems

Authors: G. Langouche

181