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Articles by author: G. Langouche

• Co-Acceptor Complexes in Si
  Published in: Shallow Impurities in Semiconductors V (p267)
• Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al_.3Ga_.7As by Mössbauer Spectroscopy
  Published in: Defects in Semiconductors 17 (p1105)
• Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C
  Published in: Defects in Semiconductors 19 (p1503)
• Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
  Published in: Defects in Semiconductors 14 (p1177)
• In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Mössbauer Spectroscopy Study
  Published in: Defects in Semiconductors 17 (p827)
• Mössbauer Spectroscopy of Fe in Silicon with the Novel Laser-Ionized ⁵⁷Mn⁺ Ion Beam at Isolde
  Published in: Defects in Semiconductors 19 (p437)
• Mössbauer Studies of Ion Implanted Systems
  Published in: Trends in Ion Implantation (p181)
• Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs
  Published in: Defects in Semiconductors 15 (p1245)
• On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
  Published in: Defects in Semiconductors 18 (p1147)
• The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
  Published in: Defects in Semiconductors 18 (p1515)
• Transition-Metal Silicide Layer Formation, the Phases of Mixed Silicides
  Published in: Materials Science Applications of Ion Beam Techniques (p339)
• Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation
  Published in: Defects in Semiconductors 17 (p803)