Authors: L. Wang, A. Xiao, K.M.B. Jansen, M. Bartek, T. Zoumpoulidis, L.J. Ernst, G.Q. Zhang
Abstract: Substrate transfer technology for SOI and non-SOI single-crystalline silicon wafers was
demonstrated allowing for high-performance low-power RF applications. 3D deformable electronics
could be realized by vertically thinning and laterally partitioning of the silicon substrate on
sub-millimeter scale. By varying the partition dimensions and the geometry of connecting bridges, the
level of acceptable deformations can be controlled. The targeted applications of this technology are
wireless ID tags and sensor networks. The mechanical properties such as crack, interfacial
delamination are critical to reach the flexible substrate. In this contribution, results of our work on
mechanical reliability issues of poly- and single crystalline silicon on ultra-thin polyimide substrates
are presented. To improve reliability, square and hexagonal segmentation with different size is
applied to the silicon layer before it is transferred onto an ultra-thin polyimide substrate using
wafer-to-wafer substrate transfer technique based on a temporary glass carrier. Generation of cracks
within the silicon and dielectric layers is then studied under controlled bending and tensile loads. The
formation of cracks is studied experimentally using specially for this purpose designed bending and
tensile tools. Ultra-thin interfacial delamination are also focused in this work by experimental and FE
simulation method. A new test setup is designed for mixed mode bending testing which has capacity
to observation specimen and recording the crack length and crack opening by microscope. The critical
energy release depended on mixed angle can be reach by combination experimental data with FEM
simulation.
2529
Authors: Yu Ting He, Rong Shi, Hong Peng Li, Feng Li, G.Q. Zhang, L.J. Ernst
Abstract: Pattern shift is one of the main failures of micro-electronics. In this paper, the influence of
plastic deformation values of micro-structures of IC packages on the pattern shift of metal lines is
studied by maximum plastic strain theory using a certain 2D FEM model with different design
parameters, “d”, “w”, “t_epo”, “t_Teos”, “t_glue” “sy_glue” and “sy_al”. For different critical
process step, the final process temperature is acted as a representative parameter to analyze its impact.
Furthermore, Response Surface Model (RSM) of plastic strains is established using any two design
parameters. Results show that “w”, “t_epo”, “t_Teos”, “t_glue” “sy_glue” and “sy_al” will have
different influence on pattern shifting while “d” have little impact.
1333
Authors: Yu Ting He, Hong Peng Li, Rong Shi, Feng Li, G.Q. Zhang, L.J. Ernst
Abstract: The passivation cracking of Micro-structures of IC packages is studied by maximum
principal stress theory using a certain 2D FEM model with different design parameters, pitch of lines,
width of line, thickness of epoxy, thickness of dielectric layer, thickness of glue, the glue material’s
yielding stress and Aluminium yielding stress (following as “d”, “w”, “t_epo”, “t_Teos”, “t_glue”
“sy_glue” and “sy_al” respectively). For different critical process steps, the final process temperature
is acted as a representative parameter to analyze its impact. Furthermore, Response Surface Model
(RSM) of principal stress is established using any two design parameters. Results show that “d”, “w”,
“t_epo”, “sy_glue” and “sy_al” will have great influence on passivation cracking while “t_Teos” have
a little impact.
515
Authors: Hui Huang, G.Q. Zhang, Y.J. Zhan, Xi Peng Xu
Abstract: An experimental study was carried out to investigate the process in surface grinding of two
kinds of typical granite with a brazed diamond wheel. The horizontal and vertical forces were
measured to obtain the data for the tangential and vertical force components as well as specific energy.
Micrograph observations on tool surface and granite surface were coupled to check the prevailing
mechanisms for material removal. Although the red granite is more difficult to machine than the black
granite, according to factory records, the normal and tangential force components and specific energy
for red granite were lower than that for black one, which might be attributed to the high height
protrusion of brazed tool and the more ductile flow occurred in the grinding arc of black granite
compared to the red one.
185
Authors: Yu Ting He, Feng Li, Rong Shi, G.Q. Zhang, L.J. Ernst, X.J. Fu
Abstract: When studying 3D fatigue crack growth behaviors of materials, to determine the crack opening stress intensity factor ratio is the key issue. Elastic-plastic Fracture Mechanics theory and physical mechanism of cracks’ closure phenomena caused by plastic deformation are employed here. A model for determining the crack opening stress intensity factor ratio under tri-axial stress state is presented. The comparison of the present model with available data and models shows quite good agreement.
1572
Authors: Yu Ting He, F. Li, Rong Shi, G.Q. Zhang, L.J. Ernst, Jack Zhang, Zhi Tang Song
Abstract: Passivation crack is one of the main failures of micro-electronics. And the IC interconnect has a large varying range values comparing with its geometry size. In this paper, the influence of geometry values of micro-structures of IC packages on passivation cracking is studied by maximum principal stress theory using a certain 2D FEM model with different design geometry parameters, pitch of lines, width of line, thickness of epoxy, thickness of dielectric layer and the Aluminum yielding stress (following as “d”, “w”, “t_epo”, “t_Teos” and “sy_al” respectively). For different critical process step, here the final process temperature is acted as a representative parameter to analyze its impact. Furthermore, Response Surface Model (RSM) of principal stress is established
using any two design parameters. Results show that width of line, thickness of dielectric layer and the Aluminium yielding stress will have great influence on passivation cracking while other parameters having little impact.
819
Authors: Y.T. He, G.Q. Zhang, F. Li, L.J. Ernst, Jack Zhang
361
Authors: Xi Peng Xu, G.Q. Zhang, Hui Huang
26
Authors: Victor Gonda, C.J. Liu, Cornelis van't Hof, Leo J. Ernst, G.Q. Zhang
205